The September 2002 conference held in Sweden heard papers presenting current experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the grown material, and the development of processes and devices that take advantage of the material properties of wide bandgap materials. Such materials SiC, III-V nitrides, and related compounds are attracting attention for their physical properties that are often superior to those of conventional semiconductors; and developments in high-power, high-temperature, high-frequency electronics and blue-light emitters owe their progress to improved knowledge in the field. A sampling of topics: stress analysis of SiC bulk single crystal growth by sublimation method; parameters of electron-hole scattering in silicon carbide; power amplification in UHF band using SiC RF power BJTs; and seeded PVT growth of aluminum nitride on silicon carbide. The book is distributed by Enfield. Annotation ©2004 Book News, Inc., Portland, OR (booknews.com) Read Less